Abstract
In this work, we investigated etching characteristics of HfO 2 thin film and Si using inductive coupled plasma (ICP) system. The maximum etch rate of HfO 2 is 85.5 nm/min at a BCl 3 /(Ar+BCl 3 ) of 20% and decreased with further addition of BCl 3 gas. From the QMS measurements, the most dominant positive ion energy distributions (IEDs) showed a maximum at 20% of BCl 3 . These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. From the mass spectra, the Hf chloride and bromine oxide must be included in the etching by-products as volatile species.
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