Abstract
The etch pits of Ga1−xAlxAs are revealed by the etchant (H2O/H2O2/CH3COOH/HF) and it is verified that these etch pits correspond faithfully to dislocations using x-ray transmission topographs. The shapes of dislocation etch pits which are revealed by the etchant (1 H2O/1 H2O2/2 CH3COOH/0.5 HF) are either conical on the (100) face of Ga1−xAlxAs with x≳0.1 or pyramidal on the (100) face of Ga1−xAlxAs with x=0.05.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
