Abstract
The intra-band relaxation time of the carriers was estimated from the spontaneously emitted profile for AlGaAs injection laser which has an undoped active region. The relaxation time is estimated in the range of τin=(0.7∼1.0)×10-13 s at 298 K by comparison between theoretical analysis and experimental measurement. The relaxation time increases slightly at low temperatures and is estimated as τin=(0.7∼1.5)×10-13 s at 100 K, but is almost constant with variation of the injection level. The band-tail effect is explained by the intra- band relaxation of electrons.
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