Abstract
Plasma-based ion implantation (PBII) using N2 gas is examined as a sterilization technique for three-dimensional targets. The application of a pulsed negative voltage (5μs pulse width, 300 pulses/s, −800V to −13kV) at an N2 gas pressure of 2.4Pa is shown to reduce the number of Bacillus pumilus survivors by up to 105 times after just 5min of exposure. The energy of nitrogen ions is calculated based on the depth profile of nitrogen concentration in Si implanted by PBII, and it is revealed that the actual nitrogen ion energy is much lower than that calculated based on the voltage applied during processing.
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