Abstract
The objective of this paper is to indicate the advantages of Silicon Carbide (SiC) devices and to introduce the instruction which type of devices should be developed. For recent years, several-kV-class high voltage SiC devices have been manufactured, and it is expected that converters for medium voltage distribution networks can be realized using these devices. In this paper, some kinds of converters have been designed and compared with each other in respect of total losses and size. As a result, it has been confirmed that carrier frequency doubles and total loss reduces by half approximately when SiC devices replace Silicon devices, SiC-FET + SiC-SBD is better than SiC-IGBT + SiC-PND, and the series connection of more devices with lower design voltage is better in the case of SiC-FET.
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