Abstract

The human voltage-gated sodium channel Nav1.7 plays a crucial role in transmission of noxious stimuli. The inherited pain disorder erythromelalgia (IEM) has been linked to Nav1.7 gain-of-function mutations. Here we show that the IEM-associated Q875E mutation located on the pore module of Nav1.7 produces a large hyperpolarizing shift (-18 mV) in the voltage dependence of activation. Three-dimensional homology modeling indicates that the side chains of Gln-875 and the gating charge Arg-214 of the domain I voltage sensor are spatially close in the activated conformation of the channel. We verified this proximity by using an engineered disulfide bridge approach. The Q875E mutation introduces a negative charge that may modify the local electrical field experienced by the voltage sensor and, upon activation, interact directly via a salt bridge with the Arg-214 gating charge residue. Together these processes could promote transition to, and stabilization of, the domain I voltage sensor in the activated conformation and thus produce the observed gain of function. In support of this hypothesis, an increase in the extracellular concentration of Ca(2+) or Mg(2+) reverted the voltage dependence of activation of the IEM mutant to near WT values, suggesting a cation-mediated electrostatic screening of the proposed interaction between Q875E and Arg-214.

Highlights

  • Nav1.7 mutations are associated with pain syndromes including erythromelalgia

  • We showed that the Q875E mutation induces a negative shift in the voltage dependence of activation, which is likely to induce the pain symptoms experienced by the patient

  • We show that the hyperpolarizing shift of activation found with the inherited pain disorder erythromelalgia (IEM) mutation Q875E may be due to a strengthening of a direct interaction between the VSD and the pore region in the open state conformation of Nav1.7

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Summary

Background

Nav1.7 mutations are associated with pain syndromes including erythromelalgia. Results: Disulfide locking experiments and three-dimensional modeling show close proximity of residues Gln-875 and the gating charge Arg-214. Three-dimensional homology modeling indicates that the side chains of Gln-875 and the gating charge Arg-214 of the domain I voltage sensor are spatially close in the activated conformation of the channel. We verified this proximity by using an engineered disulfide bridge approach. The Q875E mutation introduces a negative charge that may modify the local electrical field experienced by the voltage sensor and, upon activation, interact directly via a salt bridge with the Arg214 gating charge residue Together these processes could promote transition to, and stabilization of, the domain I voltage sensor in the activated conformation and produce the observed gain of function. Using the engineered disulfide bridge approach, we find support for this structural hypothesis, which is likely to be the molecular basis for the gain of function of this IEM-linked Q875E mutation

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