Abstract
Dual implantation of erbium and silicon into thermally grown SiO2 film on Siwas performed using a metal vapour vacuum arc ion source; this wasfollowed by rapid thermal annealing at 500–1100°C for 20 s. 1.54 μ mphotoluminescence (PL) was observed at 77 K. Rutherford backscatteringspectrometry shows that Er ions mainly distribute within 80 nm of thesurface. The highest Er peak concentration obtained exceeded 5 × 1021 cm−3,which is the highest Er concentration reported in Si-based materials.Transmission electron microscopy demonstrates that nanocrystallinesilicon (nc-Si) embeds in SiO2 matrices. The Er3 + excitation energy isobtained from the electron–hole pairs nonradiatively combining at defectsand impurities in SiO2 matrices or at the interface of the nc-Si/SiO2(or c-Si/SiO2), and energy transferring to Er3 + ions results in 1.54 μ mlight emission. The dependence on the Si-ion dose and annealing temperature ofthe PL intensity has also been investigated.
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