Abstract
Reversible optical change in a thin film system of parylene/GaSeTe film/parylene structure has been studied by measuring the time required to crystallize from the amorphous state (the erasing time) and the numbers of reversible reflectance changes occurring between amorphous (written) and crystalline (erased) states. From the discussion of GaSeTe phase diagram, it becomes clear that the optimum composition showing write-erase characteristics is obtained at an eutectic point, in which the segregation does not occur and many cycle operation is possible.
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