Abstract
This letter reports an Er-doped ZnO (EZO), CuO and Pentacene ternary nanocomposite (NC) thin film based Al/Pentacene:CuO:EZO/PEDOT:PSS/ITO broadband photodetector using low-cost solution method. The NC film shows light absorption in a broad spectral range covering the ultraviolet (UV)-visible-near infrared (NIR) region. The device shows high very external quantum efficiencies (EQEs) of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3.4\times10$ </tex-math></inline-formula> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> , <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.6\times10$ </tex-math></inline-formula> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.5\times10$ </tex-math></inline-formula> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> at 350 nm (UV), 600 nm (visible) and 1050 nm (NIR), respectively, under a reverse bias of −1 V. This high EQE is attributed to trap-assisted charge injection at the NC/Al interface under reverse bias. Characterizations of multiple fabricated devices are used to show repeatability and stability of the proposed photodetector.
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