Abstract
High quality metal/insulator heterostructures are grown epitaxially on semiconductor GaAs(1 0 0) substrates using appropriate MgO(1 0 0) buffer layers. Two model systems are described: Fe/MgO/Fe trilayers, that are used to fabricate and study epitaxial magnetic tunnel junctions, and W(1 0 0) films, which exhibit ballistic transport properties with high electron mobility. In both cases the quality of the crystalline structure as well as the interfaces at the atomic level are related to the observed magnetic and transport properties.
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