Abstract
X-ray photoelectron diffraction is used to investigate the epitaxial growth of thin high quality Ge films on Si(111). Several Ge films have been prepared with varying coverages with and without Sb terminating the interface towards the vacuum. The measured photoelectron pattern for monolayer Ge films exhibits only intralayer diffraction maxima due to the double layers formed by the Ge diamond structure. For thicker films interlayer scattering between two adjacent layers can be observed as well.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
