Abstract
AbstractEpitaxial Pt(001) thin films have been grown on MgO(001) substrates using dc magnetron sputtering with an Ar/O2 mixture at 700°C. The width (FWHM) of the rocking curve of the Pt(002) peak is between 0.16° and 0.20°, which is only 0.05° wider than that of the MgO (002) peak of the cleaved substrate. The film surface roughness is about 1 nm (rms) for a 240 nm thick Pt film. No grain structure could be observed using SEM. In contrast, the films deposited at 700 °C with pure Ar, have both Pt(111) and Pt(001) oriented growth, as shown by XRD Θ - 2 Θ scans, with the Pt(111) peak having the largest intensity. BaTiO3 epitaxial films have also been deposited on Pt(001)/MgO(001). The width (FWHM) of the rocking curve of the BaTiO3(200) peak is 0.4°. The surface morphology of the epitaxial BaTiO3(100) thin films on Pt(001)/MgO(001) is featureless. XRD pole figure measurements on Pt/BaTiO3/Pt trilayer shown a very good in-plane alignment of all layers. The epitaxial growth relationship was also confirmed by TEM electron diffraction and cross-section imaging. The Pt/BaTiO3/Pt epitaxial trilayer could serve as a prototype for ferroelectric capacitors and may be able to improve the electrical properties of the capacitors.
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