Epitaxial Growth of Nanostructured Gold Films on Germanium via Galvanic Displacement

Abstract

This work focuses on the synthesis and characterization of gold films grown via galvanic displacement on Ge(111) substrates. The synthetic approach uses galvanic displacement, a type of electroless deposition that takes place in an efficient manner under aqueous, room temperature conditions. Investigations involving X-ray diffraction (XRD) and transmission electron microscopy (TEM) techniques were performed to study the crystallinity and orientation of the resulting gold-on-germanium films. A profound effect of HF(aq) concentration was noted, and although the SEM images did not show significant differences in the resulting gold films, a host of X-ray diffraction studies demonstrated that higher concentrations of HF(aq) led to epitaxial gold-on-germanium, whereas in the absence of HF(aq), lower degrees of order (fiber texture) resulted. Cross-sectional nanobeam diffraction analyses of the Au-Ge interface confirmed the epitaxial nature of the gold-on-germanium film. This epitaxial behavior can be attributed to the simultaneous etching of the germanium oxides, formed during the galvanic displacement process, in the presence of HF. High-resolution TEM analyses showed the coincident site lattice (CSL) interface of gold-on-germanium, which results in a small 3.8% lattice mismatch due to the coincidence of four gold lattices with three of germanium.