Abstract
(110)-oriented epitaxial Fe3Si films were grown on (100) and (111) Si substrates with an epitaxial yttria-stabilized zirconia (YSZ) buffer layer by rf-magnetron sputtering. The epitaxial Fe3Si films contained a two-domain structure on the (100) substrate with a YSZ buffer layer, and a three-domain structure on the (111) substrate with a YSZ buffer layer. The coercive forces (Hc) of both epitaxial films were each approximately 40 Oe, and the saturation magnetizations (Ms) were each 850 emu/cm3, which are almost at the same level as those of bulk Fe3Si.
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