Epitaxial Growth of Bendable Cubic NiO and In2O3 Thin Films on Synthetic Mica for p- and n-type Wide-Bandgap Semiconductor Oxides

Abstract

AbstractBendable p-type NiO and n-type In2O3 thin films were epitaxially grown on synthetic mica using mist chemical vapor deposition. It was found that at a growth temperature of 400 °C, epitaxially grown cubic (111) NiO thin films developed twin rotational domains, and the epitaxial relationship between each domain and the substrate was (111) NiO [1-10] or [10-1] || (001) synthetic mica [100]. In the visible light region, the epitaxial NiO thin films showed high transparencies, and their cut-offs appeared in the UV region. Additionally, at a growth temperature of 500 °C, cubic (111) In2O3 thin films with and without Sn doping were epitaxially grown on synthetic mica. As a result of the plasma oscillation of free carriers, Sn-doped In2O3 thin films exhibited reflection characteristics in the infrared region, while maintaining their visible light transmission characteristics. Furthermore, compared with non-doped In2O3, Sn doping decreased the sheet resistance by two digits.