Abstract
Nanoporous and nanostructured films, assemblies and arrangements are important from an applied point of view in microelectronics, photonics and optical materials. The ability to minimize reflection, control light output and use contrast and variation of the refractive index to modify photonic characteristics can provide routes to enhanced photonic crystal devices, omnidirectional reflectors, antireflection coatings and broadband absorbing materials. This work shows how multiscale branching of defect-free ITO NWs grown as a layer with a graded refractive index improves antireflection properties and shifts the transparency window into the near-infrared (NIR). The measurements confirm the structural quality and growth mechanism of the NW layer without any heterogeneous seeding for NW growth. Optical reflectance measurements confirm broadband antireflection down to <5% between 1.3-1.6 um which is tunable with the NW density. The work also outlines how the suppression of the Burstein-Moss shifts using refractive index variation allows transparency in a conductive NW layer into NIR range.
Highlights
IntroductionTransparent conducting oxides (TCO) have been extensively used in various technologically important applications including solar cells [1, 2], flat panel displays [3], antireflective coatings [4], (organic) light emitting diodes [5, 6] and many other uses as advanced optical materials
Transparent conducting oxides (TCO) have been extensively used in various technologically important applications including solar cells [1, 2], flat panel displays [3], antireflective coatings [4], light emitting diodes [5, 6] and many other uses as advanced optical materials
The morphological characterization of the nanowire layers was performed by field emission scanning electron microscopy (FESEM) using a Hitachi S-4800 operating at beam voltages between 5 and 30 kV
Summary
Transparent conducting oxides (TCO) have been extensively used in various technologically important applications including solar cells [1, 2], flat panel displays [3], antireflective coatings [4], (organic) light emitting diodes [5, 6] and many other uses as advanced optical materials. These materials have unique properties, the most cited being the coexistence high electrical conductivity and optical transparency via the Burnstien-Moss shift and other condensed matter physics of conductive semiconductors [7]. As the most important transparent conducting oxide, tin-doped indium oxide has found a wide range of applications from photovoltaics to Li-ion battery materials [9, 10]
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
