Abstract
Large area epitaxial graphene (EG) layers are synthesized on 6H-SiC (0001) by annealing at 1500 °C for 5 min in a closed graphite chamber at low vacuum of 10-3 mbar and its 2D band in Raman spectra can be satisfactorily fitted by a single Lorentzian. From Raman spectroscopy, measurements indicate that too high growth temperature is to the disadvantage of the formation of graphene. The results of atomic force microscope (AFM) and field-emission scanning electronic microscope (FE-SEM) reveal the surface morphology of graphene is related with its growth temperature.
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