Abstract
The CdS layers were deposited on InP substrates by using the (H2–CdS) vapor growth technique. The single crystal layers of hexagonal CdS were obtained on InP (111), (110) and (100) with the following heteroepitaxial relationships; (0001) CdS//(111) InP and [1̄21̄0] CdS//[011̄] InP, (011̄3) CdS//(110) InP and [2̄110] CdS//[1̄10] InP, (303̄4) CdS//(100) InP and [1̄21̄0] CdS//[011̄] InP. The CdS layers deposited on InP (1̄1̄1̄) were identfied in terms of the twinned hexagonal crystals, twin planes of which were nearly parallel to (303̄4̄) and its crystallographic equivalents. The compositional gradients were observed at the interface of the deposits and the substrates.
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