Abstract
The ability of naturally occurring fulvic acid to sensitize a large band-gap semiconductor, colloidal ZnO, has been investigated by fluorescence emission and transient absorption measurements in a mixed alcohol-water system. The fulvic acid strongly adsorbs on the semiconductor particles, with an apparent association constant of 12000 [+-] 500 M[sup [minus]1]. The net charge-transfer efficiency as determined by the fluorescence quenching of reference Suwanee River fulvic acid (SFA) by ZnO was 73%. The laser flash photolysis experiments that elucidate the mechanistic details of the charge injection from excited fulvic acid into the conduction band of ZnO (k[sub et] = 6.8 x 10[sup 8] s[sup [minus]1]) are described. 28 refs., 5 figs.
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