Abstract
wChemical mechanical polishing (CMP) is the dirtiest semiconductor process using a slurry containing chemicals and abrasives. CMP process consumes a huge amount of slurry, which affects environmental sustainability negatively. The semiconductor industry has attempted to evaluate and reduce the carbon dioxide equivalent (CDE) for environmental sustainability. In this study, the environmental impact of the concentration of the slurry components in CMP of thick copper films is investigated. The selected slurry components for copper CMP are citric acid, hydrogen peroxide (H2O2), abrasive, and benzotriazole (BTA). The carbon intensity of each slurry component is estimated from previously reported studies. During the experiments, the material removal rates (MRRs) are measured for various compositions of the slurry. The CDE is obtained by measuring electric energy, slurry, and ultrapure water (UPW) consumptions. We find that citric acid and BTA positively and negatively influence the CDE, respectively. Further, 2 wt.% of H2O2 and 4 wt.% of abrasive result in the lowest values of the CDE in thick copper CMP.
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