Abstract
An ensemble Monte Carlo simulation code has been developed to study nonlinear electron transpsort across heterojunction interfaces in strong electric fields. The evolution of electron energy and momentum distribution in space and time has been investigated in detail in two AlGaAs/GaAs single well heterostructures under various operating conditions. It is found that overheating, enhanced energy relaxation, and carrier confinement as a consequence of the structure in real space have a pronounced influence on the energy and momentum distribution. As a result, the energy distribution can have a structure which directly reveals the band structure (of the material). The influence of the structure in real space and the band structure of neighboring layer on the ionization rate is also discussed along with the possibility of a new overshoot effect.
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