Abstract
In this study, W-doping with the shear exfoliation- restacking process was used to optimize the thermoelectric properties of Bi2O2Se. It is noted that W-doping with the shear exfoliation- restacking process can synergistically improve carrier concentration and mobility, thus a higher electrical conductivity was obtained. In addition, total thermal conductivity of Bi1.98W0.02O2Se was restricted to 0.6 Wm−1 K−1 at 770 K. Consequently, a maximum ZT value of Bi1.98W0.02O2Se is raised to 0.62 at 773 K. The results show that the thermoelectric properties of Bi2O2Se can be further optimized by W-doping with the shear exfoliation-restacking process.
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