Abstract
The layered oxyselenide BiCuSeO thermoelectric ceramics are attracting much scientific attention for its excellent thermoelectric properties. Herein, Bi1-xSbxCuSe1-xTexO (x = 0, 0.01, 0.02, 0.04, 0.06, 0.08) ceramics have been prepared by ball milling (BM) and resistance pressing sintering (RPS) process. The effects of Sb/Te doping and grain size on the thermoelectric/mechanical properties are investigated systematically. For the former, it can tune the Fermi level and promote the band convergence, decreasing the band gap and concurrently enhancing the carrier concentration; for the latter, it can profoundly modify microstructure into an all-scale hierarchical architecture to scatter phonons with broad range of mean free paths, effectively reducing the lattice thermal conductivity. The results indicates that the substitution of Sb/Te resulted in the significantly increase of electrical conductivity and power factor, and BM effectively reduces the grain size to ~ 387 nm in the sample after sintering, which leads to a decrease in the thermal conductivity and an increase in the electrical conductivity. The maximum power factor of 0.72 m Wm−1 K−2 and ZT value of 1.19 were obtained for Bi0.92Sb0.08CuSe0.92Te0.08O with BM time = 16 h at 873 K, which was ~ 2.7 and ~ 2.2 times as that of the pristine BiCuSeO ceramic.
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