Abstract
An in-situ non-equilibrium method to increase acceptor doping in polycrystalline CdTe thin films to 1016cm−3level using group V substitution is presented. Single phase CdTe films doped with P, As, and Sb were deposited at 550°C at 100–200 nm/s onto moving CdS/HRT/TCO/Glass superstrates by vapor transport deposition (VTD) in Cd overpressure from high purity compound sources. Doping levels before and after activation were determined by capacitance-voltage (CV) analysis of devices with no additional treatments. Dopant incorporation levels of 1017_1018 atoms/cm3were obtained based on SIMS depth profiling. Electronic activation was carried out by post deposition annealing and quenching, increasing acceptor concentrations to >1015cm−3for P and >1016cm−3for As and Sb, compared with mid-1014 cm−3 acceptor levels for un-doped CdTe films. The acceptor concentration increase by substitutional defect As Te formation was validated for As-doping by cathodoluminsence spectroscopy.
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