Abstract

Abstract Solution processed organic-inorganic halide perovskites emerged as efficient materials for the fabrication of light-emitting diodes (LEDs). Spin coating of perovskites on solid support for device integration leads to poor morphology with pinholes and leakage current through electrical shunt paths thereby decreasing the device efficiency. Here, we report a facile route to improve the performance of MAPbBr3 perovskite based LEDs by incorporating a poly(methyl methacrylate) (PMMA) interlayer in the device structure at the interface of ZnO and MAPbBr3 layer. The thickness of PMMA interlayer was varied to achieve optimal device performance by overcoming the leakage current and reduced non-radiative recombination pathways. LEDs with optimal PMMA thickness showed a significant enhancement in device performance comparison to the devices without PMMA interlayer. The perovskite LEDs with ∼7 nm PMMA interlayer exhibit a maximum luminance of ∼3450 cdm−2, current efficiency of ∼11.88 cdA−1, external quantum efficiency of ∼2.82% and power efficiency of ∼4.4 lmW−1 showing robust LED properties with ∼6-fold enhancement compared to a device without PMMA. Our route provides a convenient way to improve the efficiency of perovskite LEDs by controlling device structure with planar PMMA interlayer, which can be extended to other perovskite LEDs.

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