Abstract
Enhancement type InP metal-insulator-semiconductor field-effect transistors were fabricated using plasma anodic aluminium oxide as the gate insulator. The effective electron mobilities in the surface channel are 1250 cm2/Vs and 2000 cm2/Vs at 300 and 80 K, respectively. The drift of the drain current at 300 K ceases a few minutes after applying a gate voltage and stable dc operation is observed over several hours.
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