Abstract
Poly (vinylideneflouride)/nanomagnesium oxide (PVDF/MgO) film with MgO loading percentage of 7% were annealed with various annealing temperatures ranging from 70°C to 170°C. The PVDF/MgO(7%) thin films were fabricated using spin coating technique with metal-insulator-metal (MIM) configuration and the dielectric constant of PVDF/MgO(7%) with respect to annealing temperatures was studied. The PVDF/MgO nanocomposite thin films annealed at temperature of 70°C (AN70) showed an improvement in the dielectric constant of 27 at 103 Hz compared to un-annealed sample (UN), which is 21 at the same frequency. As the annealing temperatures were increased from 90°C (AN90) to 150oC (AN150), the dielectric constant of PVDF/MgO(7%) were found to gradually decreased from 25 to 12 respectively, interestingly lower than the UN thin films. AN70 also produced low value of tangent loss (tan δ) at frequency of 103 Hz. The resistivity value of AN70 was also found to increase from 3.08×104Ω.cm (UN-PVDF) to 1.05×105Ω.cm. The increased in dielectric constant, with low tangent loss and high resistivity value suggests that 70°C was the favourable annealing temperature for PVDF/MgO(7%) for application in electronic devices such as low frequency capacitor.
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