Abstract
Magnetoresistance of ferromagnetic single-electron transistors (SETs) is known to increase at low temperatures. In this paper, we investigate systematically how the TMR enhancement changes as a function of the tunnel resistance R T using Ni/Co/Ni-SETs. We find the enhancement almost independent of R T as far as R T ≳30 kΩ , while it is small for devices with R T ≲7 kΩ . These results are not explained by the theories based on the higher-order tunneling.
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