Abstract
An anti-reflection (AR) layer of Teflon AF was deposited on the front surface of a Cu(In,Ga)Se2 (CIGS) solar cell with a structure of grid/TCO/ZnO/CdS/Cu(In,Ga)Se2/Mo/glass by using the spin coating method. This AR layer reduced the front-surface reflection, which resulted in high efficiency for the CIGS solar cell. The thickness of the Teflon AF layer was varied to determine the thickness that gave the highest transmittance of incident light into the active absorber of the CIGS solar cell. The optimum thickness of the Teflon AF layer was found to be 105 nm. CIGS solar cells with a Teflon AF layer of 105 nm were constructed, and their efficiencies were compared with those of solar cells without a Teflon AF layer. The average increase in the relative efficiency of the solar cells was 2.63% due to the inclusion of an anti-reflection layer of Teflon AF.
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