Abstract
Light emission improvement of the solid state incandescent light emitting devices by embedding CdS into the Zr-doped HfO2 high-k dielectric has been studied. Compared with the capacitor with the Zr-doped HfO2 gate dielectric, the CdS embedded sample have: 1) higher defect densities in bulk and interface layers, 2) a smaller breakdown strength, 3) a larger leakage current, 4) more light emission dots, and 5) a higher light emission intensity. The spectrum shape and color of the emitted light were influenced by the inclusion of CdS in the high-k stack. The light emission efficiency was also enhanced. The improvement might be caused by the change of the nano-resistor composition. In summary, the embedding of CdS influences the high-k stack’s physical properties, which affects the formation of nano-resistors and the device’s light emission characteristics.
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