Abstract
Si∕Ta∕Co∕Cu∕CoFeMn (or NiO) spin valves were prepared by a delayed sputtering procedure, in which depositions of Ta and followed layers were intervened by 1h. The spin valves are found to have better coherent growth with stronger (111) preferred orientations in Co and Cu layers, compared with the traditional continuous method. At the same time, the giant magnetoresistance ratio and spin-dependent scattering are enhanced by a factor of 20%–30%. These results indicate that the coherent growth and the (111) preferred orientation can enhance the spin-dependent scattering of spin valves.
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