Abstract
A simple low-cost post-complementary metal-oxide-semiconductor-compatible process to enhance the performance of the planar spiral inductor in standard silicon (Si) substrate is demonstrated. In this process, the high loss and high permittivity of Si which reduces the inductor's performance is replaced by a lower loss and lower permittivity thick polymer material. In this way, a measured high Q-factor of more than 37 and a high self-resonance frequency of 25 GHz are achieved for a 1.7-nH inductor. Using this newly developed process, the performance of the inductor can be further improved by optimizing the design.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Components, Packaging and Manufacturing Technology
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
