Abstract
Enhancement of magnetoresistance (MR) has been achieved at room temperature in the perovskite La 0.8Ba 0.2MnO 3 epitaxial thin films. It was found that these particular epitaxial thin films exhibit higher MR ratio than that of bulk material (21% at 270 K), i.e. 33% at 320 K for 400 Å thickness, 43% at 307 K for 650 Å, 45% at 298 K for 1000 Å and 48% at 267 K for 1300 Å under the magnetic field of 8000 Oe. The metal–insulator transition temperature and magnetoresistance strongly depend on the film thickness. The MR ratio of the La 0.8Ba 0.2MnO 3 film at room temperature is remarkably large in comparison with that of other magnetoresistive oxides.
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