Abstract
In this study, we propose a liquid-phase-deposited silver nanoparticle embedded ZnO (LPD-Ag NP/ZnO) thin film at room temperature to improve the light extraction efficiency (LEE) for InGaN/GaN light-emitting diodes (LEDs). The treatment solution for the deposition of the LPD-Ag/NP ZnO thin film comprised a ZnO-powder-saturated HCl and a silver nitrate (AgNO3) aqueous solution. The enhanced LEE of an InGaN/GaN LED with the LPD-Ag NP/ZnO window layer can be attributed to the surface texture and localized surface plasmon (LSP) coupling effect. The surface texture of the LPD-Ag/NP ZnO window layer relies on the AgNO3 concentration, which decides the root-mean-square (RMS) roughness of the thin film. The LSP resonance or extinction wavelength also depends on the concentration of AgNO3, which determines the Ag NP size and content of Ag atoms in the LPD-Ag NP/ZnO thin film. The AgNO3 concentration for the optimal LEE of an InGaN/GaN LED with an LPD-Ag NP/ZnO window layer occurs at 0.05 M, which demonstrates an increased light output intensity that is approximately 1.52 times that of a conventional InGaN/GaN LED under a 20-mA driving current.
Highlights
Because gallium-nitride (GaN)-based blue light-emitting diodes (LEDs) have the inherent advantages of a wide bandgap in the green to ultraviolet range, a relatively long lifetime, and low energy consumption, they have received intensive and extensive investigation
GaN-based LEDs and solid-state lighting were widely used as transmitting devices in the visible light communication (VLC) system, which has the characteristics of high-speed light communication with low transmission loss, the absence of electromagnetic interference, and license and high security [5,6,7]
The external quantum efficiency (EQE), which is the product of the internal quantum efficiency (IQE) and light extraction efficiency (LEE), determines the light output intensity of InGaN/GaN LEDs
Summary
Because gallium-nitride (GaN)-based blue light-emitting diodes (LEDs) have the inherent advantages of a wide bandgap in the green to ultraviolet range, a relatively long lifetime, and low energy consumption, they have received intensive and extensive investigation. Some studies have reported that photonic crystals [22] and nanopyramids [23] can increase the LEE of InGaN/GaN LEDs through either diffraction or resonant coupling These approaches are not practical because they require technologies that can accurately control the dimension, such as e-beam lithography, which is not suitable for obtaining a high throughput. The textured surface and LSP coupling effect, which result from the Ag NPs and ZnO in LPD-Ag NP/ZnO thin films, can enhance the LEE of InGaN/GaN LEDs with the LPD-Ag NP/ZnO window layer. The measured results indicate that the main factor for enhancing the LEE of InGaN/GaN LEDs with the LPD-Ag NP/ZnO window layer is the LSP coupling effect
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