Abstract
The BiFeO3 (BFO) and the gadolinium and transition metal ions co-doped (Bi0.9Gd0.1)(Fe0.975TM0.025)O3-δ (TM = Ni, Co and Cr, BGFNi, BGFCo and BGFCr) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Compared to the pure BFO, improved electrical and ferroelectric properties were observed in the co-doped (Bi0.9Gd0.1)(Fe0.975TM0.025)O3-δ thin films. Among the thin films, the BGFCr thin film exhibited large remnant polarization (2Pr), low coercive field (2Ec), and reduced leakage current density, which are 136 μC/cm2, 1360 kV/cm at 1470 kV/cm, and 5.14 × 10-6 A/cm2 at 100 kV/cm, respectively.
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