Abstract
Striking increases in the intensity of donor-related, photoluminescence transitions are observed in undoped (10 14-10 15 cm -3) GaAs for excitation energies (E e) in the vicinity of the band-gap energy (E g). The enhancement has maxima at E e consistent with excitation of the n=2 and n=3 states of the free exciton (X n=2,3) and appears to be correlated to the concentration of ionized donors, suggesting that the effects are related to capture of electron-hole pairs by ionized donors through trapping of X n=2,3. A resonant interaction may be operative as well. The enhancement decreases monotonically as E e increases to values as much as 12 meV above E g.
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