Abstract
We have investigated the reason behind the enhancement of dielectric constant (), which occurred in CeO2 directly grown on Si(111). of directly grown CeO2 is enhanced to 52, which is twice as large as the reported value. From in-plane X-ray diffraction measurements and electron diffraction pattern observations using a transmission electron microscope, it has been found that the lattice spacings in CeO2 were isotopically expanded by 0.6%, as compared with the reported values in bulk CeO2. In addition, from X-ray photoelectron spectroscopy measurements, the existence of oxygen defects in CeO2 was confirmed. The oxygen defects in CeO2 may cause the decrease in coulomb interaction in the ionic crystal, resulting in the expansion of lattice spacings. The enhancement of ion movability, due to the expansion of lattice spacings is considered as the reason behind the enhancement of . [DOI: 10.1143/JJAP.43.1795]
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