Abstract
Cu2ZnSnS4 (CZTS) is a promising photo-absorber material for photovoltaics (PV) applications. Molybdenum which is employed as a back-contact metal in the CZTS based PV devices, is not the best choice. In the present work, we have used one-dimensional Solar Cell Capacitance Simulator (SCAPS-1D) to study the effect of replacing molybdenum with p+-type silicon (Si), both in the crystalline and hydrogenated amorphous phases. The device models with these two phases of Si at the back-contact led to photoconversion efficiencies (η) of 16.83 and 21.85%, respectively. Moreover, with Si at the back-contact, the performance can be further enhanced to 22.45% with the introduction of selenium in the chalcogenide sub-lattice. These improved η values are due to improved short-circuit current and fill-factors; the open-circuit voltage remains unchanged. The reduction of Schottky barrier at the back-contact with the use of Si is resulting in these beneficial effects.
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