Abstract
To enhance the conversion efficiency of Cu2ZnSnS4 (CZTS) thin film solar cells prepared by the sulfurization method, we investigated the formation process of the CZTS thin film. The holding temperature of the sulfurization was 580 °C. This study showed that the spreading resistance (SR) of the CZTS layer strongly depends on the holding time of the sulfurization. At the intermediate holding time (∼30 min), the SR of the CZTS layer came to a minimum, and the efficiency of the CZTS solar cell came to a maximum. A 7.6% efficiency CZTS solar cell without a high-resistance buffer layer and an antireflection coating was fabricated.
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