Abstract
We report the characteristics of an n-ZnO/p-Si membrane heterojunction flexible photodetector sensitive to UV and visible illumination. A piezo-phototronic effect has been observed for the deposited ZnO thin films on flexible silicon membranes. Si membranes as low as ~3.0 µm thick have been fabricated by the alkaline etching of Si wafers followed by ZnO deposition using RF sputtering for realizing the heterostructure. A peak responsivity of 0.20 AW−1 with a detectivity of 4.8 × 1011 cm Hz1/2 W−1 is found at ~490 nm for zero bias. Strain induced piezo-potential developed in ZnO thin films is found to modulate the transport property of the photo generated carriers, resulting in the enhanced performance of the device. With a gradual increase in the external tensile stress, the photocurrent increases by 22%. The accompanying COMSOL analysis displays the piezopotential distribution developed in ZnO films on application of an external stress to the heterojunction, which is in close agreement with the experimental data.
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