Abstract
ABSTRACTWe report the study of the thermoelectric properties of degenerate, boron-doped polycrystalline silicon on insulator structures. The occurrence of a regime where both the Seebeck coefficient and the conductivity increase is confirmed. This results in a power factorPof 13 mW K-2m-1. We propose that such high values ofPmay be determined by adiabatic energy filtering occurring at grain boundaries decorated by segregated boron.
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