Abstract
This work establishes the high-temperature properties of In-doped ZnSb thin films prepared by a multistep cosputtering method on flexible substrates. The microstructure and thermoelectric properties of the In-doped ZnSb thin films were investigated. X-Ray diffraction results indicated that the main peaks of the In-doped ZnSb thin films were related to ZnSb phase, with some nanocrystallization on the surface after In doping. All samples exhibited p-type conduction behavior, with increased Seebeck coefficient after In doping. The thermal conductivity decreased sharply for the In-doped samples with nanocrystallization, resulting in a ZT value almost six times higher than for undoped ZnSb thin film.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
