Abstract
SnxBi0.5-xSb1.5Te3 materials with high ZT values were prepared by vacuum melting, ball milling, cold pressing and ambient pressure sintering. The effect of Sn doping amount on the thermoelectric performance of Bi0.5Sb1.5Te3 -based materials was investigated. The results showed that Sn doping increased the carrier concentration and DOS effective mass to improve the electrical conductivity and Seebeck coefficient, respectively, resulting in an increase in the power factor. Meanwhile, the reduction in lattice thermal conductivity was attributed to enhanced phonon scattering. The decrease in bipolar thermal conductivity was caused by the suppression of intrinsic excitation. Finally, compared with Bi0.5Sb1.5Te3, the power factor increased 66%, to 2.72 mW·m−1·K−2, lattice thermal conductivity decreased by 28% to 0.334 W·m−1·K−1, and the ZT value for Sn0.01Bi0.49Sb1.5Te3 at 350 K was 1.33.
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