Abstract
A Ru capping layer is employed to improve the thermal stability of Ag ohmic reflectors for high-power GaN-based light-emitting diodes (LEDs). The 20-nm-thick Ru capping layer is shown to be fairly effective in suppressing agglomeration by forming RuO2. The Ag/Ru contacts exhibit specific contact resistance of 8.1×10−5Ωcm2 and reflectance of ∼89% at a wavelength of 450nm when annealed at 500°C for 1min, which are much better than that of Ag only contacts. Blue LEDs fabricated with the 500°C-annealed Ag/Ru contacts give a forward voltage of 2.98V at an injection current of 20mA, which is lower than that (3.02V) of LEDs with the 500°C-annealed Ag only contacts. LEDs with the 500°C-annealed Ag/Ru contacts show 25% higher output power (at 20mA) than LEDs with the 500°C-annealed Ag only contacts. X-ray photoemission spectroscopy examinations are performed to describe the improved electrical performance of the Ag/Ru contacts.
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