Year-end Sale % OFF 
Abstract
Efficient coupling to integrated high-quality-factor cavities is crucial for the employment of germanium quantum dot (QD) emitters in future monolithic silicon-based optoelectronic platforms. We report on strongly enhanced emission from single Ge QDs into L3 photonic crystal resonator (PCR) modes based on precise positioning of these dots at the maximum of the respective mode field energy density. Perfect site control of Ge QDs grown on prepatterned silicon-on-insulator substrates was exploited to fabricate in one processing run almost 300 PCRs containing single QDs in systematically varying positions within the cavities. Extensive photoluminescence studies on this cavity chip enable a direct evaluation of the position-dependent coupling efficiency between single dots and selected cavity modes. The experimental results demonstrate the great potential of the approach allowing CMOS-compatible parallel fabrication of arrays of spatially matched dot/cavity systems for group-IV-based data transfer or quantum optical systems in the telecom regime.
Highlights
We report on strongly enhanced emission from single Ge quantum dot (QD) into L3 photonic crystal resonator (PCR) modes based on precise positioning of these dots at the maximum of the respective mode field energy density
Most efforts in the group-IV system up to now were based on randomly nucleated Ge QDs without any control of the dot position.[23−25] Efficient coupling to PCR modes is important in the case of single-dot emitters for quantum optical applications, where source implementations in the III−V system are commonly based on the fabrication of a dedicated PCR around a singled-out randomly nucleated QD.[26]
For a fixed Si slab thickness h = 220 nm on top of a 2000 nm buried SiO2 layer, the PC periodicity a was varied in seven steps between 330 and 420 nm, and each period was implemented with four different hole radii to cover a range of filling factors r/a from 0.305 to 0.325
Summary
O ver the last years the prospects of monolithically integrated optical interconnects[1] as well as on-chip sensing systems[2,3] and quantum optical platforms[4,5] have triggered the development of Si-based optical components[6−12] and sources based on group-IV emitters[13−18] or hybrid integration of III−V materials.[4,19−22] Despite the progress of direct epitaxial growth of III−V semiconductors on Si,[20−22] group-IV quantum dots (QDs) distinguish themselves as promising candidates for the generation of sources for Si integrated quantum optical applications. Our work gives a clear demonstration of enhanced emission from single group-IV QDs in a silicon PCR, it shows the vast potential of the employed dot positioning approach in terms of parallel processing of large arrays of tailored single-dot cavity emitters for future CMOS-compatible quantum optical platforms
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
