Abstract
CdZnTe thin films of thickness 300nm were deposited on glass, ITO, FTO and silicon wafer at room temperature employing electron beam vacuum evaporation. These deposited films were analyzed using XRD, source meter and UV–Vis spectrophotometer to investigate structural, electrical and optical properties, respectively. The films are found to be polycrystalline in nature with zinc-blende cubic structure and evaluated structural parameters show significant effect of used substrates. The electrical study shows that the conductivity is maximum for films deposited on FTO substrate. The optical analysis shows wide transmittance with the energy band gap in the range 1.71–2.28eV.
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