Abstract
We report an enhanced side-mode suppression in Bunimovich stadium lasers with strained InGaAs/InGaP quantum well (QW) active regions. This is realized with spatially selective carrier injection along a particular periodic orbit of the stadium. The selectivity is achieved using He+3 ion implantation. Up to 21 dB enhancement in side-mode suppression is observed for a 40×20 μm2 stadium with interband transition between the first excited quantum well level. The improvement in side-mode suppression is apparently a consequence of coherent beating between orbits leading to a Vernier effect. A simple model corroborate with this hypothesis.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
