Abstract
Asymmetric quantum wells (AQWs) utilizing interband transitions enhance second-order susceptibility over a wide wavelength range compared to natural crystals. The nonlinear susceptibility is further enhanced in AQWs with type-II band alignment as compared to type-I band alignment, a result of the larger interband charge shift. This enhancement is demonstrated in this work by analyzing three type-I and type-II AQW designs based on the lattice-matched InP/AlGaInAs materials systems using the envelope wavefunction approximation. The calculated interband second-order susceptibility tensor elements in type-II structures range between 20 and 1.60 × 103 pm/V for nearly resonant optical rectification and difference frequency generation applications at near-infrared and terahertz wavelengths, an improvement of nearly 1 order of magnitude over the type-I structures and 1–2 orders of magnitude over natural crystals such as LiNbO3, KTiOPO4 (KTP), or GaAs. A factor of 2–3 further enhancement of the tensor elements is achieved by optimizing the well widths and band offsets of the type-II asymmetric quantum wells. The type-II structure can be implemented in other material systems spanning the longwave infrared to visible wavelengths, enhancing nonlinear susceptibility for various applications, including photonic integrated circuits.
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