Abstract
Polycrystalline BiFeO3 thin films have been deposited on fluorine doped tin oxide substrates successfully through a modified chemical solution deposition process based on using N,N-dimethylformamide as solvent. Structural analyses show that, N,N-dimethylformamide is beneficial to reduce the structural strain, and hence rhombohedral BiFeO3 films rather than the conventional pseudocubic ones were obtained. Absorption spectrum indicates that the modified process derived rohombohedral BiFeO3 has a narrower band gap (2.54eV) than that of the conventional process derived pseudocubic BiFeO3 (2.76eV). The BiFeO3 shows good photovoltaic properties with indium tin oxide as top electrode. The short circuit current density and open circuit voltage of the heterojunctions are measured to be 0.13mA/cm2 and 0.65V, respectively, much higher than the reported values for the conventional process derived pseudocubic BiFeO3 based heterojunctions. Our results indicate that the modified process derived rhombohedral BiFeO3 can induce higher photovoltaic effect compared with the conventional process derived pseudocubic counterpart.
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