Abstract
The short-wavelength spectral response of a thin film CuInSe 2 device is improved by a thin (<500 Å) undoped CdS layer and a 1 μm ZnO conducting window layer. The ZnO acts as an antireflection coating and permits photons of wavelength above 360 nm to be absorbed in the CuInSe 2. A 25% photo-current enhancement is measured for comparable devices. Total area efficiencies over 9% are achieved under AM 1.5 illumination. Current-voltage, capacitance-voltage and spectral response data are discussed and indicate that device properties are similar to devices with (In)CdS window layers. A reverse bias breakdown with long time constants is observed. Deep states in the thin CdS layer may be responsible.
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